Datasheets
FSL9110R3 by:

Power Field-Effect Transistor, 2.5A I(D), 100V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3

Part Details for FSL9110R3 by International Rectifier

Overview of FSL9110R3 by International Rectifier

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Part Details for FSL9110R3

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FSL9110R3 Part Data Attributes

FSL9110R3 International Rectifier
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FSL9110R3 International Rectifier Power Field-Effect Transistor, 2.5A I(D), 100V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code BCY
Package Description CYLINDRICAL, O-MBCY-W3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 1.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 7.5 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FSL9110R3

This table gives cross-reference parts and alternative options found for FSL9110R3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FSL9110R3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FSL9110R3 Power Field-Effect Transistor, 2.5A I(D), 100V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 Fairchild Semiconductor Corporation FSL9110R3 vs FSL9110R3
Part Number Description Manufacturer Compare
FSL9110R3 Power Field-Effect Transistor, 2.5A I(D), 100V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 Fairchild Semiconductor Corporation FSL9110R3 vs FSL9110R3

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