Datasheets
FSL214D1 by:

1.5A, 250V, 2.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

Part Details for FSL214D1 by Intersil Corporation

Overview of FSL214D1 by Intersil Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for FSL214D1

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FSL214D1 Part Data Attributes:

FSL214D1 Intersil Corporation
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FSL214D1 Intersil Corporation 1.5A, 250V, 2.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 2.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 15 W
Pulsed Drain Current-Max (IDM) 4.5 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FSL214D1

This table gives cross-reference parts and alternative options found for FSL214D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FSL214D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FSL214D1 Power Field-Effect Transistor, 1.5A I(D), 250V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 International Rectifier FSL214D1 vs FSL214D1
Part Number Description Manufacturer Compare
FSL214D1 Power Field-Effect Transistor, 1.5A I(D), 250V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3 International Rectifier FSL214D1 vs FSL214D1

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