Part Details for FSL214D1 by Fairchild Semiconductor Corporation
Overview of FSL214D1 by Fairchild Semiconductor Corporation
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Part Details for FSL214D1
FSL214D1 CAD Models
FSL214D1 Part Data Attributes
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FSL214D1
Fairchild Semiconductor Corporation
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FSL214D1
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 1.5A I(D), 250V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | BCY | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 1.5 A | |
Drain-source On Resistance-Max | 2.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6 W | |
Pulsed Drain Current-Max (IDM) | 4.5 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |