Part Details for FSJ9160D3 by Harris Semiconductor
Overview of FSJ9160D3 by Harris Semiconductor
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for FSJ9160D3
FSJ9160D3 CAD Models
FSJ9160D3 Part Data Attributes
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FSJ9160D3
Harris Semiconductor
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Datasheet
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FSJ9160D3
Harris Semiconductor
Power Field-Effect Transistor, 44A I(D), 100V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, S-MSFM-P3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | RADIATION HARDENED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 44 A | |
Drain-source On Resistance-Max | 0.055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation Ambient-Max | 192 W | |
Power Dissipation-Max (Abs) | 192 W | |
Pulsed Drain Current-Max (IDM) | 132 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 145 ns | |
Turn-on Time-Max (ton) | 120 ns |