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Transistors / IGBTs / FS600R07A2E3
Datasheets
FS600R07A2E3 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 530A I(C), 650V V(BR)CES, N-Channel, MODULE-33

Part Details for FS600R07A2E3 by Infineon Technologies AG

Results Overview of FS600R07A2E3 by Infineon Technologies AG

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FS600R07A2E3 Information

FS600R07A2E3 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FS600R07A2E3

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FS600R07A2E3 Part Data Attributes

Parametric Data
FS600R07A2E3 Infineon Technologies AG
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FS600R07A2E3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 530A I(C), 650V V(BR)CES, N-Channel, MODULE-33
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-33
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 530 A
Collector-Emitter Voltage-Max 650 V
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X33
Number of Elements 6
Number of Terminals 33
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 540 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 1.6 V

FS600R07A2E3 Related Parts

FS600R07A2E3 Frequently Asked Questions (FAQ)

  • The maximum junction temperature (Tj) is 150°C, but it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, ensuring good thermal contact between the device and the heat sink, and providing adequate airflow around the device.

  • The recommended gate resistance (Rg) is ≤ 2.7 Ω to ensure proper switching performance and to minimize oscillations.

  • Yes, the FS600R07A2E3 can be used in a parallel configuration, but it's essential to ensure that the devices are properly synchronized and that the gate drive circuits are designed to handle the increased current.

  • The maximum allowed dv/dt for the FS600R07A2E3 is 10 kV/μs, but it's recommended to limit dv/dt to ≤ 5 kV/μs to ensure reliable operation and minimize electromagnetic interference (EMI).