Part Details for FS5KM-18A by Mitsubishi Electric
Overview of FS5KM-18A by Mitsubishi Electric
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SJ551L-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -18A 65Mohm LDPAK(L)/To-262 | |
| 2SJ534-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -18A 65Mohm To-220Fm | |
| RJK6009DPP-M0#T2 | Renesas Electronics Corporation | Nch Single Power Mosfet 600V 18A 480Mohm To-220FlDg) |
Part Details for FS5KM-18A
FS5KM-18A CAD Models
FS5KM-18A Part Data Attributes
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FS5KM-18A
Mitsubishi Electric
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FS5KM-18A
Mitsubishi Electric
Power Field-Effect Transistor, 5A I(D), 900V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 2.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |