FS50R12KT4P_B11
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor,

Overview of FS50R12KT4P_B11 by Infineon Technologies AG

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FS50R12KT4P_B11 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 641-FS50R12KT4P_B11
Mouser Electronics IGBT Modules LOW POWER ECONO RoHS: Compliant 0
  • 1 $116.4800
  • 10 $106.3400
  • 20 $101.4500
  • 50 $99.2100
$99.2100 / $116.4800 Order Now

CAD Models for FS50R12KT4P_B11 by Infineon Technologies AG
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Part Data Attributes for FS50R12KT4P_B11 by Infineon Technologies AG

FS50R12KT4P_B11
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Case Connection
ISOLATED
Collector-Emitter Voltage-Max
1200 V
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max
6.4 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X25
Number of Elements
6
Number of Terminals
25
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
490 ns
Turn-on Time-Nom (ton)
185 ns
VCEsat-Max
2.15 V
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  1. FS50R12KT4P_B11
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor,
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