Transistors IGBTs FS35R12YT3

FS35R12YT3 by

Description: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

Overview of FS35R12YT3 by Infineon Technologies AG

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Show differences only	FS35R12YT3 Infineon Technologies AG Buy Now	part-to-be-compared Infineon Technologies AG Buy Now
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Pbfree Code	No
Rohs Code	Yes
Part Life Cycle Code	Obsolete
Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Part Package Code	MODULE
Package Description	MODULE-22
Pin Count	22
Reach Compliance Code	not_compliant
ECCN Code	EAR99
Samacsys Manufacturer	Infineon
Case Connection	ISOLATED
Collector Current-Max (IC)	40 A
Collector-Emitter Voltage-Max	1200 V
Configuration	COMPLEX
Gate-Emitter Voltage-Max	20 V
JESD-30 Code	R-XUFM-X22
Number of Elements	6
Number of Terminals	22
Operating Temperature-Max	150 °C
Package Body Material	UNSPECIFIED
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	225 W
Qualification Status	Not Qualified
Surface Mount	NO
Terminal Form	UNSPECIFIED
Terminal Position	UPPER
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Element Material	SILICON
Turn-off Time-Nom (toff)	640 ns
Turn-on Time-Nom (ton)	120 ns
VCEsat-Max	2.15 V

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