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Transistors / IGBTs / FS35R12W1T4
Datasheets
FS35R12W1T4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 65A I(C), 1200V V(BR)CES, N-Channel, MODULE-22

Part Details for FS35R12W1T4 by Infineon Technologies AG

Results Overview of FS35R12W1T4 by Infineon Technologies AG

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FS35R12W1T4 Information

FS35R12W1T4 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FS35R12W1T4

Part # Distributor Description Stock Price Buy
DISTI # 641-FS35R12W1T4
Mouser Electronics IGBT Modules N-CH 1.2KV 65A RoHS: Compliant 62
  • 1 $32.2300
  • 10 $31.2700
  • 24 $26.0800
  • 48 $25.7000
  • 264 $25.6900
$25.6900 / $32.2300 Buy Now
Win Source Electronics IGBT Array & Module Transistor 1006
  • 1 $54.7023
  • 3 $44.8840
  • 4 $43.4814
  • 5 $42.0787
  • 7 $40.6761
  • 9 $36.4682
$36.4682 / $54.7023 Buy Now

Part Details for FS35R12W1T4

FS35R12W1T4 Part Data Attributes

Parametric Data
FS35R12W1T4 Infineon Technologies AG
Buy Now Datasheet
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FS35R12W1T4 Infineon Technologies AG Insulated Gate Bipolar Transistor, 65A I(C), 1200V V(BR)CES, N-Channel, MODULE-22
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-22
Pin Count 22
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 65 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X15
Number of Elements 6
Number of Terminals 15
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 225 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns
Turn-on Time-Nom (ton) 57 ns
VCEsat-Max 2.25 V

FS35R12W1T4 Related Parts

FS35R12W1T4 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FS35R12W1T4 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure proper cooling and heat dissipation in the system.

  • The recommended gate resistor value for the FS35R12W1T4 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.

  • Yes, the FS35R12W1T4 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to follow the recommended layout and design guidelines to minimize parasitic inductance and ensure reliable operation.

  • To protect the FS35R12W1T4 from overvoltage and overcurrent conditions, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or a current-sensing resistor.