Datasheets
FS2VS-14A by:
Powerex Power Semiconductors
Mitsubishi Electric
Powerex Power Semiconductors
Not Found

Power Field-Effect Transistor, 2A I(D), 700V, 9.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

Part Details for FS2VS-14A by Powerex Power Semiconductors

Results Overview of FS2VS-14A by Powerex Power Semiconductors

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Applications Industrial Automation Automotive Motor control systems

FS2VS-14A Information

FS2VS-14A by Powerex Power Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
ISL85014FRZ-T7A Renesas Electronics Corporation 14A, 3.8V to 18V Input, Synchronous Buck Regulator
ISL85014FRZ-T Renesas Electronics Corporation 14A, 3.8V to 18V Input, Synchronous Buck Regulator
ISL85014EVAL1Z Renesas Electronics Corporation 14A, 3.8V to 18V Input, Synchronous Buck Regulator Evaluation Board

Part Details for FS2VS-14A

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FS2VS-14A Part Data Attributes

FS2VS-14A Powerex Power Semiconductors
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FS2VS-14A Powerex Power Semiconductors Power Field-Effect Transistor, 2A I(D), 700V, 9.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer POWEREX INC
Part Package Code TO-220S
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 700 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 9.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 65 W
Power Dissipation-Max (Abs) 65 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON