Datasheets
FS25R12W1T4BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

Part Details for FS25R12W1T4BOMA1 by Infineon Technologies AG

Overview of FS25R12W1T4BOMA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for FS25R12W1T4BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8754
Newark Transistor, Igbt Module, 1.2Kv, 25A, Transistor Polarity:N Channel, Dc Collector Current:45A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:205W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FS25R12W1T4BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 415
  • 1 $41.5400
  • 5 $40.0300
  • 10 $38.5200
  • 48 $37.0100
  • 72 $34.8100
  • 120 $32.4900
  • 264 $31.3200
$31.3200 / $41.5400 Buy Now
DISTI # FS25R12W1T4BOMA1-ND
DigiKey IGBT MOD 1200V 45A 205W Min Qty: 1 Lead time: 20 Weeks Container: Tray 20
In Stock
  • 1 $39.9400
  • 24 $35.5858
  • 48 $33.4663
  • 96 $31.2352
  • 240 $30.1197
$30.1197 / $39.9400 Buy Now
DISTI # 2156-FS25R12W1T4BOMA1-448-ND
DigiKey IGBT MOD 1200V 45A 205W Min Qty: 1 Lead time: 20 Weeks Container: Bulk MARKETPLACE PRODUCT 15
In Stock
  • 10 $31.9100
$31.9100 Buy Now
DISTI # FS25R12W1T4BOMA1
Avnet Americas Transistor IGBT Module N-CH 1200V 45A ±20V Screw Tray - Trays (Alt: FS25R12W1T4BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 24 $34.2395
$34.2395 Buy Now
Rochester Electronics FS25R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 15
  • 1 $32.2100
  • 25 $31.5700
  • 100 $30.2800
  • 500 $28.9900
  • 1,000 $27.3800
$27.3800 / $32.2100 Buy Now
DISTI # SP000255353
EBV Elektronik Transistor IGBT Module N-CH 1200V 45A �20V Screw Tray (Alt: SP000255353) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FS25R12W1T4BOMA1

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FS25R12W1T4BOMA1 Part Data Attributes:

FS25R12W1T4BOMA1 Infineon Technologies AG
Buy Now Datasheet
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FS25R12W1T4BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-23
Pin Count 23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 45 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X23
Number of Elements 6
Number of Terminals 23
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 505 ns
Turn-on Time-Nom (ton) 80 ns

Alternate Parts for FS25R12W1T4BOMA1

This table gives cross-reference parts and alternative options found for FS25R12W1T4BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS25R12W1T4BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FS25R12W1T4-B11 Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-22 Infineon Technologies AG FS25R12W1T4BOMA1 vs FS25R12W1T4-B11
Part Number Description Manufacturer Compare
FS10R12YT3 Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, MODULE-22 Infineon Technologies AG FS25R12W1T4BOMA1 vs FS10R12YT3
FS25R12W1T4-B11 Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-22 Infineon Technologies AG FS25R12W1T4BOMA1 vs FS25R12W1T4-B11

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