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Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-13
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FS20R06VE3
Infineon Technologies AG
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FS20R06VE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-13
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-W13 | |
Pin Count | 13 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 25 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-W13 | |
Number of Elements | 6 | |
Number of Terminals | 13 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 71.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 250 ns | |
Turn-on Time-Nom (ton) | 320 ns | |
VCEsat-Max | 2 V |