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Transistors / IGBTs / FS200R12KT4R_B11
Datasheets
FS200R12KT4R_B11 by:
Infineon Technologies AG
Honest Han
Infineon Technologies AG
Not Found

Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FS200R12KT4R_B11 by Infineon Technologies AG

Results Overview of FS200R12KT4R_B11 by Infineon Technologies AG

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FS200R12KT4R_B11 Information

FS200R12KT4R_B11 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FS200R12KT4R_B11

Part # Distributor Description Stock Price Buy
DISTI # 641-FS200R12KT4R_B11
Mouser Electronics IGBT Modules IGBT Module 200A 1200V RoHS: Compliant 8
  • 1 $139.2200
  • 10 $122.4700
$122.4700 / $139.2200 Buy Now

Part Details for FS200R12KT4R_B11

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FS200R12KT4R_B11 Part Data Attributes

Parametric Data
FS200R12KT4R_B11 Infineon Technologies AG
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FS200R12KT4R_B11 Infineon Technologies AG Insulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-35
Pin Count 35
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 280 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Moisture Sensitivity Level 1
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1000 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 190 ns
VCEsat-Max 2.15 V

FS200R12KT4R_B11 Related Parts

FS200R12KT4R_B11 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FS200R12KT4R_B11 is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.

  • To ensure proper cooling, follow the recommended thermal design guidelines provided in the datasheet. This includes using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device. Additionally, consider using thermal interface materials and following proper PCB design practices.

  • The recommended gate drive voltage for the FS200R12KT4R_B11 is between 10 V and 15 V, as specified in the datasheet. However, it's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.

  • Yes, the FS200R12KT4R_B11 is designed for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal performance, and PCB design to ensure reliable operation at high frequencies.

  • To protect the FS200R12KT4R_B11 from overvoltage and overcurrent, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism. This can include using voltage regulators, TVS diodes, and current sense resistors, as well as implementing software-based protection mechanisms.