Part Details for FS1VS-16A by Mitsubishi Electric
Overview of FS1VS-16A by Mitsubishi Electric
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Part Details for FS1VS-16A
FS1VS-16A CAD Models
FS1VS-16A Part Data Attributes:
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FS1VS-16A
Mitsubishi Electric
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FS1VS-16A
Mitsubishi Electric
Power Field-Effect Transistor, 1A I(D), 800V, 12.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 12.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 3 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |