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Transistors IGBTs FS150R12KT4BOSA1

Transistors
FS150R12KT4BOSA1
Infineon Technologies AG
Description: Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Overview of FS150R12KT4BOSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 10 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FS150R12KT4BOSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 13AC8750
Newark Transistor, Igbt Module, 1.2Kv, 150A, Continuous Collector Current:150A, Collector Emitter Saturation Voltage:1.75V, Power Dissipation:175W, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Transistor Mounting:Panel Rohs Compliant: Yes |Infineon FS150R12KT4BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $111.9900
  • 5 $110.4300
  • 10 $108.8600
  • 25 $102.5900
$102.5900 / $111.9900 Buy Now
DISTI # FS150R12KT4BOSA1-ND
DigiKey IGBT MOD 1200V 150A 750W Min Qty: 1 Lead time: 18 Weeks Container: Tray 12
In Stock
  • 1 $127.6100
  • 10 $118.1260
  • 30 $113.8153
  • 80 $108.6419
$108.6419 / $127.6100 Buy Now
DISTI # FS150R12KT4BOSA1
Avnet Americas Transistor IGBT Module N-CH 1.2kV 150A ±20V Screw Tray - Trays (Alt: FS150R12KT4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 18 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # V99:2348_17558178
Arrow Electronics Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2319 Americas - 10
  • 1 $97.3500
  • 5 $96.8500
  • 10 $94.8700
  • 25 $91.9700
$91.9700 / $97.3500 Buy Now
DISTI # 71240609
Verical Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2319 Americas - 19
  • 1 $238.7500
$238.7500 Buy Now
DISTI # 68403387
Verical Trans IGBT Module N-CH 1200V 150A 750W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2319 Americas - 10
  • 10 $94.8700
  • 25 $91.9700
$91.9700 / $94.8700 Buy Now
DISTI # FS150R12KT4
TME Module: IGBT, transistor/transistor, IGBT three-phase bridge Min Qty: 1 0
  • 1 $256.3100
  • 3 $226.4800
  • 10 $204.3900
$204.3900 / $256.3100 RFQ
DISTI # C1S322001058739
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 19
  • 1 $191.0000
$191.0000 Buy Now
DISTI # C1S322000691023
Chip1Stop IGBT Modules RoHS: Compliant 10
  • 1 $110.0000
$110.0000 Buy Now
DISTI # SP000369613
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 150A �20V Screw Tray (Alt: SP000369613) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for FS150R12KT4BOSA1 by Infineon Technologies AG
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Part Data Attributes for FS150R12KT4BOSA1 by Infineon Technologies AG
Parametric Data

FS150R12KT4BOSA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
MODULE
Package Description
MODULE-35
Pin Count
35
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
18 Weeks
Samacsys Manufacturer
Infineon
Case Connection
ISOLATED
Collector Current-Max (IC)
150 A
Collector-Emitter Voltage-Max
1200 V
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-X35
Number of Elements
6
Number of Terminals
35
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
750 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
605 ns
Turn-on Time-Nom (ton)
165 ns
VCEsat-Max
2.1 V
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  1. FS150R12KT4BOSA1
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
    VS

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