Part Details for FS150R12KT4_B9 by Infineon Technologies AG
Overview of FS150R12KT4_B9 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FS150R12KT4_B9
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FS150R12KT4_B9
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Mouser Electronics | IGBT Modules IGBT Module 150A 1700V RoHS: Compliant | 0 |
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$215.6200 / $238.6300 | Order Now |
Part Details for FS150R12KT4_B9
FS150R12KT4_B9 CAD Models
FS150R12KT4_B9 Part Data Attributes:
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FS150R12KT4_B9
Infineon Technologies AG
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Datasheet
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FS150R12KT4_B9
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-33
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X33 | |
| Pin Count | 33 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 150 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X33 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 6 | |
| Number of Terminals | 33 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 750 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 525 ns | |
| Turn-on Time-Nom (ton) | 196 ns | |
| VCEsat-Max | 2.1 V |