Part Details for FS150R12KE3BOSA1 by Infineon Technologies AG
Overview of FS150R12KE3BOSA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FS150R12KE3BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
13AC8748
|
Newark | Transistor, Igbt Module, 1.2Kv, 200A, Transistor Polarity:N Channel, Dc Collector Current:200A, Collector Emitter Saturation Voltage Vce(On):1.7V, Power Dissipation Pd:700W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FS150R12KE3BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 83 |
|
$251.2300 / $268.2300 | Buy Now |
|
DISTI #
FS150R12KE3BOSA1-ND
|
DigiKey | IGBT MOD 1200V 200A 700W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
49 In Stock |
|
$166.2023 / $184.3800 | Buy Now |
|
DISTI #
FS150R12KE3BOSA1
|
Avnet Americas | Transistor IGBT Module N-CH 1200V 200A ±20V Screw Tray - Trays (Alt: FS150R12KE3BOSA1) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
|
$199.2680 | Buy Now |
|
DISTI #
V99:2348_17558364
|
Arrow Electronics | Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2316 | Americas - 10 |
|
$241.3800 | Buy Now |
|
|
Future Electronics | IGBT Module, Six Pack Full Bridge, 200 A, 1.7 V, 700 W, 125 C, Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Bulk | 10Bulk |
|
$120.5600 | Buy Now |
|
DISTI #
FS150R12KE3BOSA1
|
Avnet Americas | Transistor IGBT Module N-CH 1200V 200A ±20V Screw Tray - Trays (Alt: FS150R12KE3BOSA1) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days Container: Tray | 0 |
|
$199.2680 | Buy Now |
|
|
Ameya Holding Limited | AG-ECONO3-4/igbt module 1200v ( FS150R12KE3 ) | 9 |
|
RFQ | |
|
DISTI #
SP000100417
|
EBV Elektronik | Transistor IGBT Module N-CH 1200V 200A �20V Screw Tray (Alt: SP000100417) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 2 Weeks, 3 Days | EBV - 0 |
|
Buy Now | |
|
DISTI #
2726177
|
element14 Asia-Pacific | TRANSISTOR, IGBT MODULE, 1.2KV, 200A RoHS: Compliant Min Qty: 1 Container: Each | 83 |
|
$255.4206 / $272.7074 | Buy Now |
|
DISTI #
2726177
|
Farnell | TRANSISTOR, IGBT MODULE, 1.2KV, 200A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 83 |
|
$230.3325 / $259.5660 | Buy Now |
Part Details for FS150R12KE3BOSA1
FS150R12KE3BOSA1 CAD Models
FS150R12KE3BOSA1 Part Data Attributes:
|
|
FS150R12KE3BOSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FS150R12KE3BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X35 | |
| Pin Count | 35 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X35 | |
| Number of Elements | 6 | |
| Number of Terminals | 35 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 610 ns | |
| Turn-on Time-Nom (ton) | 340 ns |