Datasheets
FS150R12KE3BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FS150R12KE3BOSA1 by Infineon Technologies AG

Overview of FS150R12KE3BOSA1 by Infineon Technologies AG

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Price & Stock for FS150R12KE3BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8748
Newark Igbt Module, 1.2Kv, 200A, 700W, Continuous Collector Current:200A, Collector Emitter Saturation Voltage:1.7V, Power Dissipation:700W, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FS150R12KE3BOSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 87
  • 1 $144.0600
$144.0600 Buy Now
DISTI # FS150R12KE3BOSA1-ND
DigiKey IGBT MOD 1200V 200A 700W Min Qty: 1 Lead time: 15 Weeks Container: Tray 30
In Stock
  • 1 $154.5600
  • 10 $138.5250
$138.5250 / $154.5600 Buy Now
DISTI # FS150R12KE3BOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 200A ?20V Screw Tray - Trays (Alt: FS150R12KE3BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # E02:0323_08165911
Arrow Electronics Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2435 Europe - 120
  • 1 $141.0193
$141.0193 Buy Now
DISTI # V99:2348_17558364
Arrow Electronics Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2316 Americas - 10
  • 0 $142.5367
  • 1 $103.7800
$103.7800 / $142.5367 Buy Now
Future Electronics IGBT Module, Six Pack Full Bridge, 200 A, 1.7 V, 700 W, 125 C, Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks Container: Bulk 10
Bulk
  • 10 $134.4100
  • 20 $133.2500
  • 30 $132.5800
  • 40 $131.7400
$131.7400 / $134.4100 Buy Now
DISTI # 84952631
Verical Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2435 Americas - 120
  • 1 $141.3255
$141.3255 Buy Now
DISTI # 67608567
Verical Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2316 Americas - 10
  • 1 $103.7800
$103.7800 Buy Now
DISTI # 75724048
Verical Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2338 Americas - 10
  • 1 $243.7500
$243.7500 Buy Now
DISTI # C1S322001058720
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 10
  • 1 $211.0000
$211.0000 Buy Now
DISTI # SP000100417
EBV Elektronik Transistor IGBT Module N-CH 1200V 200A �20V Screw Tray (Alt: SP000100417) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FS150R12KE3BOSA1

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FS150R12KE3BOSA1 Part Data Attributes

FS150R12KE3BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FS150R12KE3BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X35
Pin Count 35
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 340 ns

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