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Transistors / IGBTs / FS150R12KE3BOSA1
Datasheets
FS150R12KE3BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FS150R12KE3BOSA1 by Infineon Technologies AG

Results Overview of FS150R12KE3BOSA1 by Infineon Technologies AG

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FS150R12KE3BOSA1 Information

FS150R12KE3BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FS150R12KE3BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8748
Newark Igbt Module, 1.2Kv, 200A, 700W, Continuous Collector Current:200A, Collector Emitter Saturation Vo... ltage:1.7V, Power Dissipation:700W, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FS150R12KE3BOSA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 70
  • 1 $142.6500
  • 5 $133.9000
  • 10 $125.1500
$125.1500 / $142.6500 Buy Now
DISTI # FS150R12KE3BOSA1-ND
DigiKey IGBT MOD 1200V 200A 700W Min Qty: 1 Lead time: 12 Weeks Container: Tray 28
In Stock
  • 1 $137.1600
  • 10 $120.3380
$120.3380 / $137.1600 Buy Now
DISTI # FS150R12KE3BOSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 200A ?20V Screw Tray - Trays (Alt: FS150R12KE3BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 12 Weeks, 0 Days Container: Tray 0
  • 10 $133.8153
$133.8153 Buy Now
DISTI # FS150R12KE3BOSA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tray 10
  • 1 $198.0000
  • 5 $197.0000
$197.0000 / $198.0000 Buy Now
DISTI # SP000100417
EBV Elektronik Transistor IGBT Module NCH 1200V 200A 20V Screw Tray (Alt: SP000100417) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 58
RFQ

Part Details for FS150R12KE3BOSA1

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FS150R12KE3BOSA1 Part Data Attributes

Parametric Data
FS150R12KE3BOSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FS150R12KE3BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-35
Pin Count 35
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 340 ns

FS150R12KE3BOSA1 Related Parts

FS150R12KE3BOSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the FS150R12KE3BOSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the module within a temperature range of 25°C to 125°C for optimal performance and reliability.

  • To ensure proper thermal management, it's essential to provide adequate heat sinking, ensure good thermal contact between the module and the heat sink, and maintain a clean and dust-free environment. Additionally, consider using thermal interface materials and thermal pads to minimize thermal resistance.

  • The recommended gate resistor value for the FS150R12KE3BOSA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.

  • Yes, the FS150R12KE3BOSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.

  • The maximum allowable voltage transient for the FS150R12KE3BOSA1 is specified as 1200 V for a duration of 100 ns. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.