Datasheets
FS150R07N3E4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-35

Part Details for FS150R07N3E4BOSA1 by Infineon Technologies AG

Overview of FS150R07N3E4BOSA1 by Infineon Technologies AG

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Price & Stock for FS150R07N3E4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FS150R07N3E4BOSA1-448-ND
DigiKey FS150R07 - IGBT MODULE Min Qty: 3 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 112
In Stock
  • 3 $134.1600
$134.1600 Buy Now
DISTI # FS150R07N3E4BOSA1-ND
DigiKey IGBT MOD 650V 150A 430W Min Qty: 1 Lead time: 15 Weeks Container: Tray 10
In Stock
  • 1 $116.1000
$116.1000 Buy Now
DISTI # FS150R07N3E4BOSA1
Avnet Americas LOW POWER ECONO - Trays (Alt: FS150R07N3E4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks, 0 Days Container: Tray 0
RFQ
Future Electronics EconoPACK™3 Series 650 V 150 A 430 W Chassis Mount Trench Field Stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 15 Weeks Container: Tray 0
Tray
  • 1 $119.5200
  • 3 $117.8900
  • 5 $117.1400
  • 20 $115.1400
  • 30 $113.8300
$113.8300 / $119.5200 Buy Now
Rochester Electronics FS150R07 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 112
RFQ
DISTI # SP000843726
EBV Elektronik Trans IGBT Module N-CH 650V 150A 35-pin ECONO3-4 (Alt: SP000843726) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FS150R07N3E4BOSA1

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FS150R07N3E4BOSA1 Part Data Attributes

FS150R07N3E4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FS150R07N3E4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-35
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X35
Pin Count 35
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 650 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 180 ns

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