Datasheets
FS150R07N3E4BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-35

Part Details for FS150R07N3E4BOSA1 by Infineon Technologies AG

Results Overview of FS150R07N3E4BOSA1 by Infineon Technologies AG

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FS150R07N3E4BOSA1 Information

FS150R07N3E4BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FS150R07N3E4BOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FS150R07N3E4BOSA1-448-ND
DigiKey FS150R07 - IGBT MODULE Min Qty: 4 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 112
In Stock
  • 4 $98.1300
$98.1300 Buy Now
DISTI # FS150R07N3E4BOSA1-ND
DigiKey IGBT MOD 650V 150A 430W Min Qty: 1 Lead time: 12 Weeks Container: Tray Temporarily Out of Stock
  • 1 $84.9200
$84.9200 Buy Now
DISTI # FS150R07N3E4BOSA1
Avnet Americas LOW POWER ECONO - Trays (Alt: FS150R07N3E4BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 12 Weeks, 0 Days Container: Tray 0
  • 10 $94.4366
$94.4366 Buy Now
Future Electronics EconoPACK™3 Series 650 V 150 A 430 W Chassis Mount Trench Field Stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Lead time: 12 Weeks Container: Tray 0
Tray
  • 1 $89.8700
  • 3 $88.7600
  • 10 $87.5600
  • 20 $86.8800
  • 40 $85.5900
$85.5900 / $89.8700 Buy Now
DISTI # 85984936
Verical Trench and Field Stop IGBT Module Min Qty: 4 Package Multiple: 1 Date Code: 2301 Americas - 110
  • 4 $117.9500
  • 25 $115.5875
  • 100 $110.8750
  • 500 $106.1500
  • 1,000 $100.2625
$100.2625 / $117.9500 Buy Now
Rochester Electronics FS150R07 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 112
  • 1 $94.3600
  • 25 $92.4700
  • 100 $88.7000
  • 500 $84.9200
  • 1,000 $80.2100
$80.2100 / $94.3600 Buy Now
DISTI # SP000843726
EBV Elektronik Trans IGBT Module NCH 650V 150A 35pin ECONO34 (Alt: SP000843726) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FS150R07N3E4BOSA1

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FS150R07N3E4BOSA1 Part Data Attributes

FS150R07N3E4BOSA1 Infineon Technologies AG
Buy Now Datasheet
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FS150R07N3E4BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-35
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-35
Pin Count 35
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 650 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 180 ns

FS150R07N3E4BOSA1 Related Parts

FS150R07N3E4BOSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2013-03-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.

  • The selection of a gate driver depends on the specific application requirements, such as voltage, current, and switching frequency. Infineon recommends using their EiceDRIVER™ gate driver family, which is optimized for their MOSFETs. The EiceDRIVER™ 1EDF5673B is a suitable option for the FS150R07N3E4BOSA1.

  • The maximum allowed voltage derating for the FS150R07N3E4BOSA1 is 80% of the maximum rated voltage (VDS) at a junction temperature of 150°C. This means that the maximum allowed voltage is 80% of 700V, which is 560V.

  • Proper cooling of the MOSFET can be achieved by using a heat sink with a thermal interface material (TIM) and ensuring good airflow around the device. The heat sink should be designed to keep the junction temperature below the maximum rated temperature of 150°C. Infineon provides thermal resistance data in the datasheet to help with heat sink design.

  • The FS150R07N3E4BOSA1 is a sensitive electronic component and should be stored and handled according to Infineon's recommended procedures to prevent damage. This includes storing the devices in their original packaging, avoiding exposure to moisture and static electricity, and handling the devices by the body rather than the leads.