Datasheets
FS10KM-12 by:

Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for FS10KM-12 by Mitsubishi Electric

Overview of FS10KM-12 by Mitsubishi Electric

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Applications Industrial Automation

Price & Stock for FS10KM-12

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, SOT-186 250
  • 1 $2.5000
  • 101 $1.3500
  • 223 $1.2500
$1.2500 / $2.5000 Buy Now

Part Details for FS10KM-12

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FS10KM-12 Part Data Attributes

FS10KM-12 Mitsubishi Electric
Buy Now Datasheet
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FS10KM-12 Mitsubishi Electric Power Field-Effect Transistor, 10A I(D), 600V, 0.94ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.94 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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