Part Details for FS100R17N3E4B11BOSA1 by Infineon Technologies AG
Overview of FS100R17N3E4B11BOSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FS100R17N3E4B11BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
448-FS100R17N3E4B11BOSA1-ND
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DigiKey | IGBT MOD 1700V 100A 600W Min Qty: 1 Lead time: 16 Weeks Container: Tray |
9 In Stock |
|
$161.2510 / $178.8900 | Buy Now |
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DISTI #
SP000880982
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EBV Elektronik | Trans IGBT Module N-CH 1.7KV 100A 23-pin ECONO3-4 (Alt: SP000880982) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FS100R17N3E4B11BOSA1
FS100R17N3E4B11BOSA1 CAD Models
FS100R17N3E4B11BOSA1 Part Data Attributes:
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FS100R17N3E4B11BOSA1
Infineon Technologies AG
Buy Now
Datasheet
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FS100R17N3E4B11BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X35 | |
| Number of Elements | 6 | |
| Number of Terminals | 35 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 600 W | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1240 ns | |
| Turn-on Time-Nom (ton) | 280 ns | |
| VCEsat-Max | 2.3 V |