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Transistors / IGBTs / FS100R17N3E4
Datasheets
FS100R17N3E4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor

Part Details for FS100R17N3E4 by Infineon Technologies AG

Results Overview of FS100R17N3E4 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FS100R17N3E4 Information

FS100R17N3E4 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FS100R17N3E4

Part # Distributor Description Stock Price Buy
DISTI # 641-FS100R17N3E4
Mouser Electronics IGBT Modules 1700 V, 100 A sixpack IGBT module RoHS: Compliant 3
  • 1 $115.2800
  • 10 $97.9600
$97.9600 / $115.2800 Buy Now

Part Details for FS100R17N3E4

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FS100R17N3E4 Part Data Attributes

Parametric Data
FS100R17N3E4 Infineon Technologies AG
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FS100R17N3E4 Infineon Technologies AG Insulated Gate Bipolar Transistor
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Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-35
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X35
Number of Elements 6
Number of Terminals 35
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 600 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1240 ns
Turn-on Time-Nom (ton) 280 ns
VCEsat-Max 2.3 V

FS100R17N3E4 Related Parts

FS100R17N3E4 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.

  • When selecting a gate driver for the FS100R17N3E4, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using a gate driver with a output current of at least 2A and a voltage rating of 15V or higher. The 2EDN driver family from Infineon is a suitable option.

  • Although not explicitly stated in the datasheet, Infineon recommends limiting voltage overshoots to 20% of the maximum rated voltage (VDS) to prevent damage to the MOSFET. This means the maximum allowed voltage overshoot would be approximately 240V (200V x 1.2).

  • To ensure safe operation during overvoltage conditions, use a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the MOSFET. This will help protect the device from voltage spikes and surges. Additionally, consider implementing overvoltage protection (OVP) and undervoltage protection (UVP) circuits in your design.

  • The FS100R17N3E4 is suitable for high-frequency switching applications up to 100 kHz. However, the optimal operating frequency range depends on the specific application, PCB layout, and thermal management. It's recommended to consult Infineon's application notes and simulation tools to determine the best operating frequency for your design.