Part Details for FRL430H by Fairchild Semiconductor Corporation
Overview of FRL430H by Fairchild Semiconductor Corporation
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Part Details for FRL430H
FRL430H CAD Models
FRL430H Part Data Attributes
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FRL430H
Fairchild Semiconductor Corporation
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FRL430H
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL CAN-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | BCY | |
Package Description | HERMETIC SEALED, METAL CAN-3 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |