Part Details for FQU4P40 by Fairchild Semiconductor Corporation
Overview of FQU4P40 by Fairchild Semiconductor Corporation
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Part Details for FQU4P40
FQU4P40 CAD Models
FQU4P40 Part Data Attributes
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FQU4P40
Fairchild Semiconductor Corporation
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Datasheet
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FQU4P40
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-251 | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Category CO2 Kg | 8.8 | |
| Additional Feature | AVALANCHE RATED, FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 2.7 A | |
| Drain-source On Resistance-Max | 3.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 10.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |