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Transistors / Power Field-Effect Transistors / FQU13N06LTU-WS
Datasheets
FQU13N06LTU-WS by:

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, TO-251 3L (IPAK), 5040-TUBE

Part Details for FQU13N06LTU-WS by onsemi

Overview of FQU13N06LTU-WS by onsemi

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Price & Stock for FQU13N06LTU-WS

Part # Distributor Description Stock Price Buy
DISTI # 48AC1192
Newark Qf 60V 115Mohm L Ipak/Tube Rohs Compliant: Yes |Onsemi FQU13N06LTU-WS Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1881
  • 1 $1.3200
  • 10 $1.0500
  • 100 $0.7110
  • 500 $0.6140
  • 1,000 $0.5370
  • 2,500 $0.4330
  • 10,000 $0.4200
$0.4200 / $1.3200 Buy Now
DISTI # FQU13N06LTU-WS-ND
DigiKey MOSFET N-CH 60V 11A IPAK Min Qty: 1 Lead time: 99 Weeks Container: Tube 39246
In Stock
  • 1 $1.0800
  • 70 $0.8646
  • 140 $0.6851
  • 560 $0.5807
  • 1,050 $0.4730
  • 2,030 $0.4453
  • 5,040 $0.4241
  • 10,010 $0.4045
$0.4045 / $1.0800 Buy Now
Rochester Electronics FQU13N06L - Power MOSFET, N-Channel, Logic Level, QFET, 60 V, 11 A ' RoHS: Compliant Status: Obsolete Min Qty: 1 3960
  • 1 $0.7066
  • 25 $0.6925
  • 100 $0.6642
  • 500 $0.6359
  • 1,000 $0.6006
$0.6006 / $0.7066 Buy Now

Part Details for FQU13N06LTU-WS

FQU13N06LTU-WS CAD Models

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FQU13N06LTU-WS Part Data Attributes:

Parametric Data
FQU13N06LTU-WS onsemi
Buy Now Datasheet
Compare Parts:
FQU13N06LTU-WS onsemi Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, TO-251 3L (IPAK), 5040-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code TO-251 3L (IPAK)
Package Description PLASTIC, IPAK-3
Manufacturer Package Code 369AR
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 44 A
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU13N06LTU-WS

This table gives cross-reference parts and alternative options found for FQU13N06LTU-WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU13N06LTU-WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQU13N06LTU_WS N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL onsemi FQU13N06LTU-WS vs FQU13N06LTU_WS
FQU13N06LTU Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, 5040-TUBE onsemi FQU13N06LTU-WS vs FQU13N06LTU
Part Number Description Manufacturer Compare
FQD13N06LTF_NL Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU-WS vs FQD13N06LTF_NL
934056250118 Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 Nexperia FQU13N06LTU-WS vs 934056250118
FQD13N06LTM_NL Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU-WS vs FQD13N06LTM_NL
BUK92150-55A,118 N-channel TrenchMOS logic level FET DPAK 3-Pin NXP Semiconductors FQU13N06LTU-WS vs BUK92150-55A,118
FQU13N06LTU Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, IPAK, 5040-TUBE onsemi FQU13N06LTU-WS vs FQU13N06LTU
FQD13N06TM Power MOSFET, N-Channel, QFET®, 60 V, 10 A, 140 mΩ, DPAK, 2500-REEL onsemi FQU13N06LTU-WS vs FQD13N06TM
FQU13N06LTU_WS N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL onsemi FQU13N06LTU-WS vs FQU13N06LTU_WS
FQD13N06L Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU-WS vs FQD13N06L
FQD13N06LTF Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU-WS vs FQD13N06LTF
FQD13N06TF Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQU13N06LTU-WS vs FQD13N06TF

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