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Transistors / Small Signal Field-Effect Transistors / FQT1N80TF-WS
Datasheets
FQT1N80TF-WS by:

Power MOSFET, N-Channel, QFET®, 800 V, 0.2 A, 20 Ω, SOT-223, SOT-223 4L, 4000-REEL

Part Details for FQT1N80TF-WS by onsemi

Overview of FQT1N80TF-WS by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQT1N80TF-WS

Part # Distributor Description Stock Price Buy
DISTI # 31Y1560
Newark Mosfet, N-Ch, 800V, 0.2A, Sot-223-3, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQT1N80TF-WS Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $1.0100
  • 10 $0.8230
  • 100 $0.6400
  • 500 $0.5420
  • 1,000 $0.4410
  • 2,500 $0.4160
$0.4160 / $1.0100 Buy Now
DISTI # FQT1N80TF-WSCT-ND
DigiKey MOSFET N-CH 800V 200MA SOT223-3 Min Qty: 1 Lead time: 47 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.9700
  • 10 $0.7910
  • 100 $0.6153
  • 500 $0.5215
  • 1,000 $0.4249
  • 2,000 $0.4000
  • 4,000 $0.4000
  • 8,000 $0.3809
  • 12,000 $0.3633
$0.3633 / $0.9700 Buy Now
DISTI # FQT1N80TF-WS
Avnet Americas Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT1N80TF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 47 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4351
  • 8,000 $0.4235
  • 16,000 $0.4119
  • 24,000 $0.4003
  • 32,000 $0.3887
$0.3887 / $0.4351 Buy Now
DISTI # 512-FQT1N80TF_WS
Mouser Electronics MOSFET 800V 0.2A 20Ohm N-Channel RoHS: Compliant 15870
  • 1 $0.9800
  • 10 $0.8070
  • 100 $0.6220
  • 500 $0.5320
  • 1,000 $0.4250
  • 2,000 $0.4000
  • 4,000 $0.3900
  • 8,000 $0.3810
$0.3810 / $0.9800 Buy Now
Future Electronics MOSFET 800V 0.2A 20Ohm N-Channel RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel 0
Reel
  • 4,000 $0.3800
  • 8,000 $0.3750
  • 12,000 $0.3650
$0.3650 / $0.3800 Buy Now
DISTI # FQT1N80TF-WS
Avnet Americas Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT1N80TF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 47 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4351
  • 8,000 $0.4235
  • 16,000 $0.4119
  • 24,000 $0.4003
  • 32,000 $0.3887
$0.3887 / $0.4351 Buy Now
DISTI # FQT1N80TF-WS
Avnet Asia Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT1N80TF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 47 Weeks, 0 Days 0
  • 4,000 $0.3405
  • 8,000 $0.3361
  • 12,000 $0.3318
  • 20,000 $0.3276
  • 40,000 $0.3195
  • 100,000 $0.3118
  • 200,000 $0.3045
$0.3045 / $0.3405 Buy Now
DISTI # FQT1N80TF-WS
Avnet Silica Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT1N80TF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 37 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FQT1N80TF-WS
EBV Elektronik Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT1N80TF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 49 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FQT1N80TF-WS

FQT1N80TF-WS CAD Models

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FQT1N80TF-WS Part Data Attributes:

Parametric Data
FQT1N80TF-WS onsemi
Buy Now Datasheet
Compare Parts:
FQT1N80TF-WS onsemi Power MOSFET, N-Channel, QFET®, 800 V, 0.2 A, 20 Ω, SOT-223, SOT-223 4L, 4000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-223 4L
Package Description SOT-223, 4 PIN
Manufacturer Package Code 318H-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 90 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 20 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Pulsed Drain Current-Max (IDM) 0.8 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 90 ns

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