Datasheets
FQT13N06LTF by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
onsemi
Rochester Electronics LLC
Not Found

Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for FQT13N06LTF by Fairchild Semiconductor Corporation

Results Overview of FQT13N06LTF by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Medical Imaging Robotics and Drones

FQT13N06LTF Information

FQT13N06LTF by Fairchild Semiconductor Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQT13N06LTF

Part # Distributor Description Stock Price Buy
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 7130
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics MOSFET N-CH 60V 2.8A SOT-223 12000
  • 135 $0.3707
  • 330 $0.3042
  • 510 $0.2947
  • 705 $0.2852
  • 910 $0.2757
  • 1,215 $0.2472
$0.2472 / $0.3707 Buy Now

Part Details for FQT13N06LTF

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FQT13N06LTF Part Data Attributes

FQT13N06LTF Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQT13N06LTF Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-223
Package Description SOT-223, 4 PIN
Pin Count 4
Manufacturer Package Code MOLDED PACKAGE, SOT-223, 4 LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95

Alternate Parts for FQT13N06LTF

This table gives cross-reference parts and alternative options found for FQT13N06LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQT13N06LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQT13N06LD84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQT13N06LTF vs FQT13N06LD84Z
Part Number Manufacturer Composite Price Description Compare
IRLL014NTR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, FQT13N06LTF vs IRLL014NTR
IRLL014NHR International Rectifier Check for Price Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN FQT13N06LTF vs IRLL014NHR
FQT13N06TF Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN FQT13N06LTF vs FQT13N06TF
IRLL014N International Rectifier Check for Price Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, FQT13N06LTF vs IRLL014N
FQT13N06L Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN FQT13N06LTF vs FQT13N06L
FQT13N06TF onsemi $0.3124 Power MOSFET, N-Channel, QFET®, 60 V, 2.8 A, 140 mΩ, SOT-223, SOT-223-4 / TO-261-4, 4000-REEL FQT13N06LTF vs FQT13N06TF
IRLL014NPBF Infineon Technologies AG $0.3815 Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, SOT-223, 4 PIN FQT13N06LTF vs IRLL014NPBF
FQT13N06L onsemi Check for Price Small Signal Field-Effect Transistor FQT13N06LTF vs FQT13N06L
FQT13N06LL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FQT13N06LTF vs FQT13N06LL99Z
FQT13N06LTF Rochester Electronics LLC Check for Price 2800mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-223, 4 PIN FQT13N06LTF vs FQT13N06LTF

FQT13N06LTF Related Parts

FQT13N06LTF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQT13N06LTF is -55°C to 150°C.

  • To ensure proper biasing, the FQT13N06LTF requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) between 10V and 60V.

  • To minimize parasitic inductance, it is recommended to use a compact PCB layout with short leads, and to place the FQT13N06LTF close to the power source and load.

  • To protect the FQT13N06LTF from ESD, it is recommended to handle the device with anti-static wrist straps, mats, and bags, and to use ESD-sensitive devices handling procedures.

  • The recommended gate resistor value for the FQT13N06LTF is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.