Datasheets
FQPF2N60C by:

N-Channel QFET® MOSFET 600V, 2A, 4.7Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL

Part Details for FQPF2N60C by Fairchild Semiconductor Corporation

Overview of FQPF2N60C by Fairchild Semiconductor Corporation

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Price & Stock for FQPF2N60C

Part # Distributor Description Stock Price Buy
DISTI # 2156-FQPF2N60C-ND
DigiKey POWER FIELD-EFFECT TRANSISTOR, 2 Min Qty: 501 Container: Bulk MARKETPLACE PRODUCT 21339
In Stock
  • 501 $0.6000
$0.6000 Buy Now
Rochester Electronics Power Field-Effect Transistor, 2A, 600V, 4.7ohm, N-Channel, MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 42339
  • 1 $0.6055
  • 25 $0.5934
  • 100 $0.5692
  • 500 $0.5450
  • 1,000 $0.5147
$0.5147 / $0.6055 Buy Now
Chip1Cloud MOSFET N-CH 600V 2A TO-220F 8167
RFQ

Part Details for FQPF2N60C

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FQPF2N60C Part Data Attributes:

FQPF2N60C Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQPF2N60C Fairchild Semiconductor Corporation N-Channel QFET® MOSFET 600V, 2A, 4.7Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 120 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 4.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 23 W
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQPF2N60C

This table gives cross-reference parts and alternative options found for FQPF2N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF2N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQPF2N60 Power Field-Effect Transistor, 1.6A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQPF2N60C vs FQPF2N60
FQPF2N60 1.6A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC FQPF2N60C vs FQPF2N60
Part Number Description Manufacturer Compare
FQPF2N60 1.6A, 600V, 4.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN Rochester Electronics LLC FQPF2N60C vs FQPF2N60
FQPF2N60 Power Field-Effect Transistor, 1.6A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN Fairchild Semiconductor Corporation FQPF2N60C vs FQPF2N60

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