Datasheets
FQPF27P06 by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
onsemi
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Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

Part Details for FQPF27P06 by Fairchild Semiconductor Corporation

Results Overview of FQPF27P06 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FQPF27P06 Information

FQPF27P06 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQPF27P06

Part # Distributor Description Stock Price Buy
Bristol Electronics   329
RFQ
Quest Components 17 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET 20
  • 1 $2.2960
  • 3 $1.7220
  • 16 $1.4350
$1.4350 / $2.2960 Buy Now
Vyrian Transistors 2530
RFQ
Win Source Electronics MOSFET P-CH 60V 17A TO-220F 41725
  • 17 $2.9741
  • 36 $2.7822
  • 56 $2.6862
  • 81 $2.4944
  • 105 $2.3984
  • 131 $2.3025
$2.3025 / $2.9741 Buy Now

Part Details for FQPF27P06

FQPF27P06 CAD Models

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FQPF27P06 Part Data Attributes

FQPF27P06 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQPF27P06 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 560 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 47 W
Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQPF27P06

This table gives cross-reference parts and alternative options found for FQPF27P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF27P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQPF12P10 Rochester Electronics LLC Check for Price 8.2A, 100V, 0.29ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN FQPF27P06 vs FQPF12P10
FQP22P10 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FQPF27P06 vs FQP22P10

FQPF27P06 Related Parts

FQPF27P06 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQPF27P06 is -55°C to 150°C.

  • To ensure proper biasing, the FQPF27P06 requires a minimum of 10V on the gate-source voltage (Vgs) and a maximum of 20V on the drain-source voltage (Vds).

  • To minimize parasitic inductance, it is recommended to use a compact PCB layout with short leads and a solid ground plane. Additionally, place the FQPF27P06 close to the power source and use a low-ESR capacitor for decoupling.

  • To protect the FQPF27P06 from overvoltage and overcurrent conditions, use a voltage regulator or a zener diode to limit the voltage, and a current sense resistor or a fuse to limit the current.

  • The recommended gate resistor value for the FQPF27P06 is between 1kΩ to 10kΩ, depending on the specific application and switching frequency.