Part Details for FQPF13N10 by Fairchild Semiconductor Corporation
Overview of FQPF13N10 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQPF13N10
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 8.7A, 100V, 0.18ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 146426 |
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$0.5704 / $0.6711 | Buy Now |
Part Details for FQPF13N10
FQPF13N10 CAD Models
FQPF13N10 Part Data Attributes:
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FQPF13N10
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQPF13N10
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220F | |
| Package Description | TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 95 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 34.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF13N10
This table gives cross-reference parts and alternative options found for FQPF13N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF13N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FQPF13N10 vs SPP80N03S2L-05 |
| NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQPF13N10 vs NDP7050L |
| SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FQPF13N10 vs SSH60N08 |
| FQP6N50 | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQPF13N10 vs FQP6N50 |
| STW13NK80Z | 12A, 800V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | FQPF13N10 vs STW13NK80Z |
| STB24NM65N | N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET | STMicroelectronics | FQPF13N10 vs STB24NM65N |
| NDB705BE | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | FQPF13N10 vs NDB705BE |
| SSH70N10 | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FQPF13N10 vs SSH70N10 |
| NDB706AL | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | FQPF13N10 vs NDB706AL |
| STB80NF55L-08T4 | 80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | FQPF13N10 vs STB80NF55L-08T4 |