Datasheets
FQPF11N50CF by:

Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Part Details for FQPF11N50CF by Fairchild Semiconductor Corporation

Overview of FQPF11N50CF by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FQPF11N50CF

Part # Distributor Description Stock Price Buy
DISTI # 2156-FQPF11N50CF-ND
DigiKey POWER FIELD-EFFECT TRANSISTOR, 1 Min Qty: 193 Container: Bulk MARKETPLACE PRODUCT 2055
In Stock
  • 193 $1.5600
$1.5600 Buy Now
Rochester Electronics Power Field-Effect Transistor, 11A, 500V, 0.55ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 2055
  • 1 $1.5800
  • 25 $1.5500
  • 100 $1.4800
  • 500 $1.4200
  • 1,000 $1.3400
$1.3400 / $1.5800 Buy Now
Chip1Cloud MOSFET N-CH 500V 11A TO-220F 2500
RFQ

Part Details for FQPF11N50CF

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FQPF11N50CF Part Data Attributes:

FQPF11N50CF Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQPF11N50CF Fairchild Semiconductor Corporation Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 670 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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