Part Details for FQPF10N60C_F105 by onsemi
Overview of FQPF10N60C_F105 by onsemi
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
R5F1056AGSP#30 | Renesas Electronics Corporation | Low Power, Low Pin Count Microcontrollers for General Purpose Applications | |
R5F1058AGLA#W0 | Renesas Electronics Corporation | Low Power, Low Pin Count Microcontrollers for General Purpose Applications | |
R5F1058AALA#U0 | Renesas Electronics Corporation | Low Power, Low Pin Count Microcontrollers for General Purpose Applications |
Part Details for FQPF10N60C_F105
FQPF10N60C_F105 CAD Models
FQPF10N60C_F105 Part Data Attributes
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FQPF10N60C_F105
onsemi
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Datasheet
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FQPF10N60C_F105
onsemi
N-Channel QFET® MOSFET 600V, 9.5A, 730 mΩ, TO-220F 3L, 8000-RAIL
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | PLASTIC, SC-91A, TO-220F, FULL PACK-3 | |
Manufacturer Package Code | TO220M03 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 700 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 9.5 A | |
Drain-source On Resistance-Max | 0.73 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |