Part Details for FQPF10N60C by Fairchild Semiconductor Corporation
Overview of FQPF10N60C by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQPF10N60C
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.5A I(D), 600V, 0.73OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 20 |
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$1.7296 / $2.1620 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9.5A I(D), 600V, 0.73OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 275 |
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$1.5999 / $3.4592 | Buy Now |
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Chip1Cloud | MOSFET N-CH 600V 9.5A TO-220F | 16000 |
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RFQ |
Part Details for FQPF10N60C
FQPF10N60C CAD Models
FQPF10N60C Part Data Attributes:
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FQPF10N60C
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQPF10N60C
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220F | |
| Package Description | LEAD FREE, TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 700 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9.5 A | |
| Drain-source On Resistance-Max | 0.73 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF10N60C
This table gives cross-reference parts and alternative options found for FQPF10N60C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF10N60C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FQPF10N60C vs SPP80N03S2L-05 |
| NDP7050L | Power Field-Effect Transistor, 75A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQPF10N60C vs NDP7050L |
| SSH60N08 | Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FQPF10N60C vs SSH60N08 |
| FQP6N50 | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQPF10N60C vs FQP6N50 |
| STW13NK80Z | 12A, 800V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | FQPF10N60C vs STW13NK80Z |
| STB24NM65N | N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET | STMicroelectronics | FQPF10N60C vs STB24NM65N |
| NDB705BE | 70A, 50V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | FQPF10N60C vs NDB705BE |
| SSH70N10 | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FQPF10N60C vs SSH70N10 |
| NDB706AL | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | FQPF10N60C vs NDB706AL |
| STB80NF55L-08T4 | 80A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | FQPF10N60C vs STB80NF55L-08T4 |