Datasheets
FQP3P50 by:

Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220, 1000-TUBE

Part Details for FQP3P50 by onsemi

Overview of FQP3P50 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FQP3P50

Part # Distributor Description Stock Price Buy
DISTI # 82C4337
Newark Transistor, mosfet, p-Channel,500V V(Br)Dss,2.7A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP3P50 Min Qty: 300 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 100 $1.1600
  • 500 $1.0300
  • 1,000 $0.8970
  • 2,500 $0.7240
  • 10,000 $0.7020
$0.7020 / $1.1600 Buy Now
DISTI # 38AH0343
Newark Qf -500V 4.9Ohm To220 Rohs Compliant: Yes |Onsemi FQP3P50 Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $2.1600
  • 100 $1.8100
  • 500 $1.6300
  • 1,000 $1.4200
  • 2,500 $1.3400
  • 10,000 $1.2900
$1.2900 / $2.1600 Buy Now
DISTI # FQP3P50-ND
DigiKey MOSFET P-CH 500V 2.7A TO220-3 Lead time: 48 Weeks Container: Tube Temporarily Out of Stock
Buy Now
DISTI # 73928979
RS Transistor, P-channel, QFET MOSFET, -500V, -2.7A, 4.9 Ohm, -55 to 150C, TO-220 | ON Semiconductor FQP3P50 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 52 Weeks, 0 Days Container: Bulk 0
  • 5 $1.5500
  • 50 $1.4400
  • 100 $1.4000
$1.4000 / $1.5500 RFQ
DISTI # FQP3P50
EBV Elektronik Trans MOSFET P-CH 500V 2.7A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP3P50) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FQP3P50

FQP3P50 CAD Models

FQP3P50 Part Data Attributes:

FQP3P50 onsemi
Buy Now Datasheet
Compare Parts:
FQP3P50 onsemi Power MOSFET, P-Channel, QFET®, -500 V, -2.7 A, 4.9 Ω, TO-220, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 37 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 250 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 4.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 85 W
Pulsed Drain Current-Max (IDM) 10.8 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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