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Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99AC9205
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Newark | Mosfet, N-Ch, 200V, 28A, 156W, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:28A, Drain Source Voltage Vds:200V, On Resistance Rds(On):0.068Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Onsemi FQP32N20C Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
FQP32N20CFS-ND
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DigiKey | MOSFET N-CH 200V 28A TO220-3 Min Qty: 1 Lead time: 99 Weeks Container: Tube |
106 In Stock |
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$1.9453 / $2.8600 | Buy Now |
DISTI #
76838835
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Verical | Trans MOSFET N-CH 200V 28A 3-Pin(3+Tab) TO-220 Tube Min Qty: 4 Package Multiple: 1 Date Code: 2232 | Americas - 250 |
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$1.6310 / $2.1175 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 28A, 200V, 0.082ohm, N-Channel, MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 15000 |
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$1.3900 / $1.6400 | Buy Now |
DISTI #
FQP32N20C
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TME | Transistor: N-MOSFET, unipolar, 200V, 17.8A, 156W, TO220AB Min Qty: 1 | 9 |
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$0.9600 / $1.4400 | Buy Now |
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Flip Electronics | Stock | 1454 |
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RFQ | |
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New Advantage Corporation | TO220-3/N-Channel QFET MOSFET 200V, 28A, 82mO RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 700 |
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$1.1500 / $1.2400 | Buy Now |
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FQP32N20C
onsemi
Buy Now
Datasheet
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FQP32N20C
onsemi
Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220, 1000-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-220, 3 PIN | |
Manufacturer Package Code | 340AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 26 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 955 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.082 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 112 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |