Part Details for FQP11P06 by Fairchild Semiconductor Corporation
Results Overview of FQP11P06 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQP11P06 Information
FQP11P06 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP11P06
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 335 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 11.4A, 60V, 0.175ohm, P-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 122497 |
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$0.5297 / $0.6232 | Buy Now |
Part Details for FQP11P06
FQP11P06 CAD Models
FQP11P06 Part Data Attributes
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FQP11P06
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQP11P06
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO220, JEDEC, MOLDED | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 11.4 A | |
Drain-source On Resistance-Max | 0.175 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 53 W | |
Pulsed Drain Current-Max (IDM) | 45.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQP11P06
This table gives cross-reference parts and alternative options found for FQP11P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP11P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | FQP11P06 vs IPB80N06S2LH5ATMA1 |
STP7NE10 | STMicroelectronics | Check for Price | 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQP11P06 vs STP7NE10 |
STH8NA60 | STMicroelectronics | Check for Price | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | FQP11P06 vs STH8NA60 |
934057024118 | NXP Semiconductors | Check for Price | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | FQP11P06 vs 934057024118 |
NDB705BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | FQP11P06 vs NDB705BEL |
STD5NE10T4 | STMicroelectronics | Check for Price | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | FQP11P06 vs STD5NE10T4 |
FDP8878 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | FQP11P06 vs FDP8878 |
FDA16N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3PN, 3 PIN | FQP11P06 vs FDA16N50 |
FQPF5N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-220F, 3 PIN | FQP11P06 vs FQPF5N90 |
PHB45NQ15T | Nexperia | Check for Price | Power Field-Effect Transistor | FQP11P06 vs PHB45NQ15T |