Datasheets
FQP11P06 by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
onsemi
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for FQP11P06 by Fairchild Semiconductor Corporation

Results Overview of FQP11P06 by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

FQP11P06 Information

FQP11P06 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQP11P06

Part # Distributor Description Stock Price Buy
Bristol Electronics   335
RFQ
Rochester Electronics Power Field-Effect Transistor, 11.4A, 60V, 0.175ohm, P-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 122497
  • 1 $0.6232
  • 25 $0.6107
  • 100 $0.5858
  • 500 $0.5609
  • 1,000 $0.5297
$0.5297 / $0.6232 Buy Now

Part Details for FQP11P06

FQP11P06 CAD Models

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FQP11P06 Part Data Attributes

FQP11P06 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQP11P06 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description TO-220, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, TO220, JEDEC, MOLDED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 160 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 11.4 A
Drain-source On Resistance-Max 0.175 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 53 W
Pulsed Drain Current-Max (IDM) 45.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQP11P06

This table gives cross-reference parts and alternative options found for FQP11P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP11P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN FQP11P06 vs IPB80N06S2LH5ATMA1
STP7NE10 STMicroelectronics Check for Price 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN FQP11P06 vs STP7NE10
STH8NA60 STMicroelectronics Check for Price 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 FQP11P06 vs STH8NA60
934057024118 NXP Semiconductors Check for Price 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 FQP11P06 vs 934057024118
NDB705BEL National Semiconductor Corporation Check for Price TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power FQP11P06 vs NDB705BEL
STD5NE10T4 STMicroelectronics Check for Price 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 FQP11P06 vs STD5NE10T4
FDP8878 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 40A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 FQP11P06 vs FDP8878
FDA16N50 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 16.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3PN, 3 PIN FQP11P06 vs FDA16N50
FQPF5N90 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-220F, 3 PIN FQP11P06 vs FQPF5N90
PHB45NQ15T Nexperia Check for Price Power Field-Effect Transistor FQP11P06 vs PHB45NQ15T

FQP11P06 Related Parts

FQP11P06 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQP11P06 is -55°C to 150°C.

  • To ensure the FQP11P06 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • The maximum current rating for the FQP11P06 is 11A, but this is dependent on the PCB design, thermal management, and cooling system used.

  • Use a voltage regulator or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to protect against overcurrent.

  • Yes, the FQP11P06 can be used in high-frequency switching applications, but ensure the PCB design and layout are optimized for high-frequency operation, and consider using a gate driver to reduce switching losses.