Datasheets
FQI6N50TU by:

Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3

Part Details for FQI6N50TU by Fairchild Semiconductor Corporation

Overview of FQI6N50TU by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for FQI6N50TU

Part # Distributor Description Stock Price Buy
Rochester Electronics 5.5A, 500V, 1.3ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 1650
  • 1 $0.6711
  • 25 $0.6577
  • 100 $0.6308
  • 500 $0.6040
  • 1,000 $0.5704
$0.5704 / $0.6711 Buy Now

Part Details for FQI6N50TU

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FQI6N50TU Part Data Attributes

FQI6N50TU Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQI6N50TU Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-262AA
Package Description I2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 340 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 98 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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