Part Details for FQI6N50TU by Fairchild Semiconductor Corporation
Overview of FQI6N50TU by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for FQI6N50TU
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 5.5A, 500V, 1.3ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1650 |
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$0.5704 / $0.6711 | Buy Now |
Part Details for FQI6N50TU
FQI6N50TU CAD Models
FQI6N50TU Part Data Attributes
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FQI6N50TU
Fairchild Semiconductor Corporation
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Datasheet
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FQI6N50TU
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-262AA | |
Package Description | I2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 340 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 1.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 98 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |