Part Details for FQI34N20L by Fairchild Semiconductor Corporation
Overview of FQI34N20L by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for FQI34N20L
FQI34N20L CAD Models
FQI34N20L Part Data Attributes:
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FQI34N20L
Fairchild Semiconductor Corporation
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Datasheet
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FQI34N20L
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 640 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQI34N20L
This table gives cross-reference parts and alternative options found for FQI34N20L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQI34N20L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SFF250ZS | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | FQI34N20L vs SFF250ZS |
| MTV32N20E-RL | 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | FQI34N20L vs MTV32N20E-RL |
| IRF650BJ69Z | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQI34N20L vs IRF650BJ69Z |
| SFF250ZUBS | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | FQI34N20L vs SFF250ZUBS |
| SFF250C | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254C, 3 PIN | Solid State Devices Inc (SSDI) | FQI34N20L vs SFF250C |
| SFF250ZDBS | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | FQI34N20L vs SFF250ZDBS |
| SSPL2090 | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | FQI34N20L vs SSPL2090 |
| SFF250Z | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | FQI34N20L vs SFF250Z |
| IRF650AJ69Z | Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FQI34N20L vs IRF650AJ69Z |
| SFF250ZUBTXV | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN | Solid State Devices Inc (SSDI) | FQI34N20L vs SFF250ZUBTXV |