Part Details for FQD4P25 by Fairchild Semiconductor Corporation
Overview of FQD4P25 by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FQD4P25
FQD4P25 CAD Models
FQD4P25 Part Data Attributes
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FQD4P25
Fairchild Semiconductor Corporation
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Datasheet
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FQD4P25
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 2.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 12.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD4P25
This table gives cross-reference parts and alternative options found for FQD4P25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD4P25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| FQD4P25TM | Rochester Electronics LLC | Check for Price | 3.1A, 250V, 2.1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | FQD4P25 vs FQD4P25TM |
| FQD4P25TF | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | FQD4P25 vs FQD4P25TF |
| FQD4P25TF | Rochester Electronics LLC | Check for Price | 3.1A, 250V, 2.1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | FQD4P25 vs FQD4P25TF |
| FQD4P25TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | FQD4P25 vs FQD4P25TM |
| SFR9224TM | Rochester Electronics LLC | Check for Price | 2.5A, 250V, 2.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | FQD4P25 vs SFR9224TM |
| SFR9224TF | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 250V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | FQD4P25 vs SFR9224TF |