Datasheets
FQD3P50TM by:

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for FQD3P50TM by Fairchild Semiconductor Corporation

Overview of FQD3P50TM by Fairchild Semiconductor Corporation

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Applications Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for FQD3P50TM

Part # Distributor Description Stock Price Buy
Chip1Cloud Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 500V 2.1A DPAK 21000
RFQ

Part Details for FQD3P50TM

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FQD3P50TM Part Data Attributes

FQD3P50TM Fairchild Semiconductor Corporation
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FQD3P50TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 2.1 A
Drain-source On Resistance-Max 4.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 8.4 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD3P50TM

This table gives cross-reference parts and alternative options found for FQD3P50TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD3P50TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD3P50TM-F085 500V P-Channel MOSFET, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified onsemi FQD3P50TM vs FQD3P50TM-F085
FQD3P50TM_F085 500V P-Channel MOSFET, TO-252 3L (DPAK), 30000-TAPE REEL onsemi FQD3P50TM vs FQD3P50TM_F085
FQD3P50TM Power MOSFET, P-Channel, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK, 2500-REEL onsemi FQD3P50TM vs FQD3P50TM
Part Number Description Manufacturer Compare
FQD3P50TM-F085 500V P-Channel MOSFET, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified onsemi FQD3P50TM vs FQD3P50TM-F085
FQD3P50TM_F085 500V P-Channel MOSFET, TO-252 3L (DPAK), 30000-TAPE REEL onsemi FQD3P50TM vs FQD3P50TM_F085
DMP45H4D9HJ3 Power Field-Effect Transistor, 4.6A I(D), 450V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, Diodes Incorporated FQD3P50TM vs DMP45H4D9HJ3
DMP45H4D9HK3-13 Power Field-Effect Transistor, 3A I(D), 450V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Diodes Incorporated FQD3P50TM vs DMP45H4D9HK3-13
FQD3P50TM Power MOSFET, P-Channel, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK, 2500-REEL onsemi FQD3P50TM vs FQD3P50TM

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