Part Details for FQD2N80TM by onsemi
Overview of FQD2N80TM by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD2N80TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
15R3446
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Newark | N Channel Mosfet, 800V, 1.8A, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:1.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Product Range:-Rohs Compliant: Yes |Onsemi FQD2N80TM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6300 | Buy Now |
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DISTI #
FQD2N80TM
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Avnet Americas | Trans MOSFET N-CH 800V 1.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD2N80TM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500 |
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RFQ | |
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Bristol Electronics | 100 |
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RFQ |
Part Details for FQD2N80TM
FQD2N80TM CAD Models
FQD2N80TM Part Data Attributes
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FQD2N80TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD2N80TM
onsemi
N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT, DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 6.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 7.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD2N80TM
This table gives cross-reference parts and alternative options found for FQD2N80TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD2N80TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD2N80TM | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FQD2N80TM vs FQD2N80TM |
| FQD2N80TF | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD2N80TM vs FQD2N80TF |
| FQD2N80TF_NL | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD2N80TM vs FQD2N80TF_NL |
| FQB2N80TM | 2.4A, 800V, 6.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FQD2N80TM vs FQB2N80TM |
| FQD2N80TF | 1.8A, 800V, 6.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD2N80TM vs FQD2N80TF |