Part Details for FQD24N08TF by Fairchild Semiconductor Corporation
Overview of FQD24N08TF by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD24N08TF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 19.6A, 80V, 0.06ohm, N-Channel Power MOSFET, TO-252 ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 798 |
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$0.2610 / $0.3071 | Buy Now |
Part Details for FQD24N08TF
FQD24N08TF CAD Models
FQD24N08TF Part Data Attributes:
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FQD24N08TF
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQD24N08TF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 19.6 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 78.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQD24N08TF
This table gives cross-reference parts and alternative options found for FQD24N08TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD24N08TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ71L | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | FQD24N08TF vs BUZ71L |
MTD2N40E-T4 | Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Motorola Semiconductor Products | FQD24N08TF vs MTD2N40E-T4 |
BUZ11A | 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FQD24N08TF vs BUZ11A |
MTD20N06VT4 | 20A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | onsemi | FQD24N08TF vs MTD20N06VT4 |
STP20NE06L | 20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FQD24N08TF vs STP20NE06L |
934056247118 | Power Field-Effect Transistor, 18A I(D), 55V, 0.086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Nexperia | FQD24N08TF vs 934056247118 |
PHB21N06LT-T | Power Field-Effect Transistor | Nexperia | FQD24N08TF vs PHB21N06LT-T |
NTD3055L104G | Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | FQD24N08TF vs NTD3055L104G |
RFD14N06L | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | Harris Semiconductor | FQD24N08TF vs RFD14N06L |
PHD21N06LT | Power Field-Effect Transistor | Nexperia | FQD24N08TF vs PHD21N06LT |