Datasheets
FQD1P50TM by: Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 1.2A I(D), 500V, 10.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for FQD1P50TM by Fairchild Semiconductor Corporation

Overview of FQD1P50TM by Fairchild Semiconductor Corporation

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for FQD1P50TM

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FQD1P50TM Part Data Attributes:

FQD1P50TM Fairchild Semiconductor Corporation
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FQD1P50TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 1.2A I(D), 500V, 10.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 110 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 1.2 A
Drain-source On Resistance-Max 10.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 38 W
Pulsed Drain Current-Max (IDM) 4.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD1P50TM

This table gives cross-reference parts and alternative options found for FQD1P50TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD1P50TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD1P50TF Power Field-Effect Transistor, 1.2A I(D), 500V, 10.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD1P50TM vs FQD1P50TF
FQD1P50 Power Field-Effect Transistor, 1.2A I(D), 500V, 10.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD1P50TM vs FQD1P50
Part Number Description Manufacturer Compare
FQD1P50 Power Field-Effect Transistor, 1.2A I(D), 500V, 10.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD1P50TM vs FQD1P50
FQD1P50TF Power Field-Effect Transistor, 1.2A I(D), 500V, 10.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD1P50TM vs FQD1P50TF

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