Part Details for FQD1N60CTM by onsemi
Overview of FQD1N60CTM by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for FQD1N60CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
29AC6370
|
Newark | Qfc 600V 11.5Ohm Dpak Rohs Compliant: Yes |Onsemi FQD1N60CTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2420 / $0.2540 | Buy Now |
|
DISTI #
95W3214
|
Newark | Power Mosfet, N Channel, 1 A, 600 V, 9.3 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQD1N60CTM Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
|
Rochester Electronics | Power Field-Effect Transistor, 1A, 600V, 11.5ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 3555 |
|
$0.2321 / $0.2730 | Buy Now |
|
DISTI #
FQD1N60CTM
|
TME | Transistor: N-MOSFET, unipolar, 600V, 0.6A, 28W, DPAK Min Qty: 1 | 0 |
|
$0.3040 / $0.8780 | RFQ |
|
|
LCSC | 600V 1A 11.510V500mA 4V250uA 1PCSNChannel TO-252 MOSFETs ROHS | 62 |
|
$0.3537 / $0.5984 | Buy Now |
Part Details for FQD1N60CTM
FQD1N60CTM CAD Models
FQD1N60CTM Part Data Attributes:
|
|
FQD1N60CTM
onsemi
Buy Now
Datasheet
|
Compare Parts:
FQD1N60CTM
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 1 A, 11.5 Ω, DPAK, 2500-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 11.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD1N60CTM
This table gives cross-reference parts and alternative options found for FQD1N60CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD1N60CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD1N60CTM | 1A, 600V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | Rochester Electronics LLC | FQD1N60CTM vs FQD1N60CTM |