Datasheets
FQD18N20V2TM by:

15A, 200V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3

Part Details for FQD18N20V2TM by Rochester Electronics LLC

Overview of FQD18N20V2TM by Rochester Electronics LLC

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Part Details for FQD18N20V2TM

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FQD18N20V2TM Part Data Attributes:

FQD18N20V2TM Rochester Electronics LLC
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FQD18N20V2TM Rochester Electronics LLC 15A, 200V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Package Description LEAD FREE, DPAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 340 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD18N20V2TM

This table gives cross-reference parts and alternative options found for FQD18N20V2TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD18N20V2TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD18N20V2TM Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK, 2500-REEL onsemi FQD18N20V2TM vs FQD18N20V2TM
FQD18N20V2TM Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Fairchild Semiconductor Corporation FQD18N20V2TM vs FQD18N20V2TM
Part Number Description Manufacturer Compare
FDD2670 N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ, 2500-REEL onsemi FQD18N20V2TM vs FDD2670
FQD12N20TF 9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FQD18N20V2TM vs FQD12N20TF
PSMN130-200D,118 N-channel TrenchMOS SiliconMAX standard level FET@en-us DPAK 3-Pin Nexperia FQD18N20V2TM vs PSMN130-200D,118
FDB2670L99Z Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation FQD18N20V2TM vs FDB2670L99Z
FDB2670L86Z Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQD18N20V2TM vs FDB2670L86Z
FQD18N20V2TF Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD18N20V2TM vs FQD18N20V2TF
FDD2670 Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD18N20V2TM vs FDD2670
STD20NF20 N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package STMicroelectronics FQD18N20V2TM vs STD20NF20
FDB2670S62Z Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation FQD18N20V2TM vs FDB2670S62Z
HUF75925D3ST 11A, 200V, 0.275ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC FQD18N20V2TM vs HUF75925D3ST

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