Part Details for FQD13N06LTF by Fairchild Semiconductor Corporation
Overview of FQD13N06LTF by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQD13N06LTF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 420 |
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$0.4175 / $0.8350 | Buy Now |
Part Details for FQD13N06LTF
FQD13N06LTF CAD Models
FQD13N06LTF Part Data Attributes
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FQD13N06LTF
Fairchild Semiconductor Corporation
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Datasheet
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FQD13N06LTF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD13N06LTF
This table gives cross-reference parts and alternative options found for FQD13N06LTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD13N06LTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD13N06_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTF vs FQD13N06_NL |
| BUK92150-55A,118 | N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin | Nexperia | FQD13N06LTF vs BUK92150-55A,118 |
| BUK92150-55A | 11A, 55V, 0.155ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | FQD13N06LTF vs BUK92150-55A |
| FQD13N06TM | Power MOSFET, N-Channel, QFET®, 60 V, 10 A, 140 mΩ, DPAK, 2500-REEL | onsemi | FQD13N06LTF vs FQD13N06TM |
| FQD13N06LTF_NL | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTF vs FQD13N06LTF_NL |
| FQD13N06L | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTF vs FQD13N06L |
| FQD13N06TF_NL | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTF vs FQD13N06TF_NL |
| FQD13N06LTM | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTF vs FQD13N06LTM |
| FQD13N06 | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD13N06LTF vs FQD13N06 |
| FQD13N06LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 11 A, 115 mΩ, DPAK, 2500-REEL | onsemi | FQD13N06LTF vs FQD13N06LTM |