Part Details for FQD12N20LTM by Fairchild Semiconductor Corporation
Overview of FQD12N20LTM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for FQD12N20LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Chip 1 Exchange | INSTOCK | 2500 |
|
RFQ | |
|
|
Chip 1 Exchange | INSTOCK | 730 |
|
RFQ | |
|
|
Win Source Electronics | MOSFET N-CH 200V 9A DPAK | 30511 |
|
$0.4072 / $0.5259 | Buy Now |
Part Details for FQD12N20LTM
FQD12N20LTM CAD Models
FQD12N20LTM Part Data Attributes
|
|
FQD12N20LTM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FQD12N20LTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD12N20LTM
This table gives cross-reference parts and alternative options found for FQD12N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD12N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD18N20V2TM | 15A, 200V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | Rochester Electronics LLC | FQD12N20LTM vs FQD18N20V2TM |
| FDD2670 | N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ, DPAK-3 / TO-252-3, 2500-REEL | onsemi | FQD12N20LTM vs FDD2670 |
| 934057072118 | TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | NXP Semiconductors | FQD12N20LTM vs 934057072118 |
| IRFR13N20DTRLP | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | FQD12N20LTM vs IRFR13N20DTRLP |
| FQD12N20TM | Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FQD12N20TM |
| PSMN130-200D/T3 | Power Field-Effect Transistor | Nexperia | FQD12N20LTM vs PSMN130-200D/T3 |
| FDB2670L86Z | Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FDB2670L86Z |
| FQD12N20TF | 9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD12N20LTM vs FQD12N20TF |
| PSMN130-200D | Power Field-Effect Transistor | Nexperia | FQD12N20LTM vs PSMN130-200D |
| IRFR13N20D | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | FQD12N20LTM vs IRFR13N20D |