Transistors
FQD11P06TF
Description: Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3

Overview of FQD11P06TF by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQD11P06TF by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Quest Components 9.4 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 1392
  • 1 $3.9200
  • 332 $1.6170
  • 619 $1.4700
$1.4700 / $3.9200 Buy Now

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Part Data Attributes for FQD11P06TF by Fairchild Semiconductor Corporation

FQD11P06TF
Fairchild Semiconductor Corporation
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-252
Package Description
LEAD FREE, DPAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
160 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
9.4 A
Drain-source On Resistance-Max
0.185 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
38 W
Pulsed Drain Current-Max (IDM)
37.6 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FQD11P06TF
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3
    VS

Alternate Parts for FQD11P06TF

This table gives cross-reference parts and alternative options found for FQD11P06TF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD11P06TF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FQD11P06 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD11P06TF vs FQD11P06
FQD11P06TM Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD11P06TF vs FQD11P06TM
FQD11P06TF 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 Rochester Electronics LLC FQD11P06TF vs FQD11P06TF
Part Number Description Manufacturer Compare
FQD11P06TM 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 Rochester Electronics LLC FQD11P06TF vs FQD11P06TM
FQD11P06 Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD11P06TF vs FQD11P06
FQD11P06TF 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE, DPAK-3 Rochester Electronics LLC FQD11P06TF vs FQD11P06TF
FQD11P06TM Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD11P06TF vs FQD11P06TM

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