Part Details for FQB9N50CTM by onsemi
Overview of FQB9N50CTM by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQB9N50CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
95W3213
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Newark | Mosfet Transistor, N Channel, 9 A, 500 V, 0.65 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQB9N50CTM Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$2.2600 | Buy Now |
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DISTI #
FQB9N50CTM
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Avnet Americas | Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB9N50CTM) RoHS: Compliant Min Qty: 725 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 7200 Partner Stock |
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$0.8556 / $1.0212 | Buy Now |
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Rochester Electronics | FQB9N50C - Power MOSFET, N-Channel, QFET, 500 V, 9 A, 800 m, RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 605 |
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$0.8646 / $1.0200 | Buy Now |
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Flip Electronics | Stock, ship today | 7200 |
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$0.6900 | RFQ |
Part Details for FQB9N50CTM
FQB9N50CTM CAD Models
FQB9N50CTM Part Data Attributes:
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FQB9N50CTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB9N50CTM
onsemi
Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB9N50CTM
This table gives cross-reference parts and alternative options found for FQB9N50CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB9N50CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB9N50C | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | FQB9N50CTM vs FQB9N50C |
| FQB9N50C | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FQB9N50CTM vs FQB9N50C |