Part Details for FQB9N50CTM by Fairchild Semiconductor Corporation
Results Overview of FQB9N50CTM by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FQB9N50CTM Information
FQB9N50CTM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQB9N50CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 3894 |
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RFQ |
Part Details for FQB9N50CTM
FQB9N50CTM CAD Models
FQB9N50CTM Part Data Attributes
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FQB9N50CTM
Fairchild Semiconductor Corporation
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Datasheet
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FQB9N50CTM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB9N50CTM
This table gives cross-reference parts and alternative options found for FQB9N50CTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB9N50CTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQB9N50CTM | onsemi | Check for Price | Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL | FQB9N50CTM vs FQB9N50CTM |
| FQB9N50C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | FQB9N50CTM vs FQB9N50C |
| FQB9N50C | onsemi | Check for Price | Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQB9N50CTM vs FQB9N50C |
| FQB9N50 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 500V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | FQB9N50CTM vs FQB9N50 |
| FQB9N50TM | Rochester Electronics LLC | Check for Price | 9A, 500V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | FQB9N50CTM vs FQB9N50TM |
| FQB9N50CFTM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | FQB9N50CTM vs FQB9N50CFTM |